N02L83W2A
2Mb Ultra-Low Power Asynchronous CMOS SRAM
256K × 8 bit
Overview
The N02L83W2A is an integrated memory device
containing a 2 Mbit Static Random Access Memory
organized as 262,144 words by 8 bits. The device
is designed and fabricated using ON
Semiconductor ’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with two chip enable
(CE1 and CE2) controls and output enable (OE) to
allow for easy memory expansion. The
N02L83W2A is optimal for various applications
where low-power is critical such as battery backup
and hand-held devices. The device can operate
over a very wide temperature range of -40 o C to
+85 o C and is available in JEDEC standard
packages compatible with other standard 256Kb x
8 SRAMs
Product Family
Features
? Single Wide Power Supply Range
2.3 to 3.6 Volts
? Very low standby current
2.0μA at 3.0V (Typical)
? Very low operating current
2.0mA at 3.0V and 1μs (Typical)
? Very low Page Mode operating current
0.8mA at 3.0V and 1μs (Typical)
? Simple memory control
Dual Chip Enables (CE1 and CE2)
Output Enable (OE) for memory expansion
? Low voltage data retention
Vcc = 1.8V
? Very fas t output enable access time
30ns OE access time
? Automatic power down to standby mode
? TTL compatible three-state output driver
Part Number
Package Type
Operating Power
Temperature Supply (Vcc)
Speed
Standby Operating
Current (I SB ), Current (Icc),
Typical Typical
N02L83W2AT
32 - TSOP I
-40 o C to +85 o C 2.3V - 3.6V 70ns @ 2.3V
N02L83W2AN
N02L83W2AT2
32 - STSOP I
32 - TSOP I Green
55ns @ 2.7V
2 μ A
2 mA @ 1MHz
N02L83W2AN2
32 - STSOP I Green
Pin Configuration
Pin Descriptions
Pin Name
Pin Function
A11
A9
A8
A1 3
WE
CE2
A15
V CC
A17
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
N02L83W2A
STSOP-I, TSOP-I
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
V SS
I/O2
I/O1
I/O0
A0
A1
A2
A3
A 0 -A 17
WE
CE1, CE2
OE
I/O 0 -I/O 7
V CC
V SS
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Data Inputs/Outputs
Power
Ground
?2008 SCILLC. All rights reserved.
July 2008 - Rev. 8
Publication Order Number:
N02L83W2A/D
相关PDF资料
N04L63W1AB27I IC SRAM 4MBIT 3V LP 48-BGA
N04L63W2AT27IT IC SRAM 4MBIT 3V LP 44-TSOP
N050-012 PANEL PATCH CAT5E WALL MT 12PORT
N052-012 PANEL PATCH CAT5E 568B 12PORT
N052-024 PANEL PATCH CAT5E 568B 24PORT
N052-048 PANEL PATCH CAT5E 48 PORT RACK
N08L6182AB27I IC SRAM 8MBIT 1.8V LP 48-BGA
N08L63W2AB27I IC SRAM 4MBIT 70NS 48BGA
相关代理商/技术参数
N02L83W2AN5I 功能描述:静态随机存取存储器 2MB 3V LOW PWR 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray
N02L83W2AN5IT 功能描述:静态随机存取存储器 2MB 3V LOW PWR 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray
N02L83W2AT25I 功能描述:静态随机存取存储器 2MB 3V LOW PWR 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray
N02L83W2AT25IT 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 8 bit
N02L83W2AT5I 功能描述:静态随机存取存储器 2MB 3V LOW PWR 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray
N02L83W2AT5IT 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 8 bit
N02M0818L1A 制造商:NANOAMP 制造商全称:NANOAMP 功能描述:2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit
N02M0818L1AD 制造商:NANOAMP 制造商全称:NANOAMP 功能描述:2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit